maximum ratings: (t c =25c) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v cer 70 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7.0 v continuous collector current i c 15 a continuous base current i b 7.0 a power dissipation p d 115 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance ? jc 1.52 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i cev v ce =100v, v eb =1.5v 1.0 ma i cev v ce =100v, v eb =1.5v, t c =150c 5.0 ma i ceo v ce =30v 0.7 ma i ebo v eb =7.0v 5.0 ma bv ceo i c =200ma 60 v bv cer i c =200ma, r be =100 70 v v ce(sat) i c =4.0a, i b =400ma 1.1 v v ce(sat) i c =10a, i b =3.3a 3.0 v v be(on) v ce =4.0v, i c =4.0a 1.5 v h fe v ce =4.0v, i c =4.0a 20 70 h fe v ce =4.0v, i c =10a 5.0 h fe v ce =4.0v, i c =1.0a, f=1.0khz 15 120 f t v ce =10v, i c =0.5a, f=1.0mhz 2.5 mhz f hfe v ce =4.0v, i c =1.0a, f=1.0khz 10 khz i s/b v ce =40v, t=1.0s 2.87 a 2N3055 npn mj2955 pnp complementary silicon power transistors description: the central semiconductor 2N3055 and mj2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. marking: full part number to-3 case r1 (26-july 2013) www.centralsemi.com
2N3055 npn mj2955 pnp complementary silicon power transistors to-3 case - mechanical outline lead code: 1) base 2) emitter case) collector marking: full part number r2 www.centralsemi.com r1 (26-july 2013)
|
